Similarly the minimum amount of current required to keep the collector load switched is also 50nA.

Minimum current required for keeping the base of the transistor activated is 50nA.

The maximum base to emitter breakdown voltage is 6 volts.

Similarly the maximum collector to base breakdown voltage is 60 volts.

Maximum collector to emitter breakdown voltage for a 2N3904 transistor is 40 volts.

Other Useful Characteristics of this device are discussed below: The maximum allowable collector to emitter or the Ic must not exceed 200mA.The Vcbo or the maximum tolerable voltage across collector-base is 60 volts.The Vceo or the maximum tolerable Collector-Emitter voltage is 4 volts.The absolute maximum ratings of this transistor may be understood from the following data: It's dynamic range may include a current handling capability of more than 100mA for switching applications and a 100MHz frequency handling capacity fits with amplification purposes. The function is NPN HIGH POWER SILICON TRANSISTOR.The transistor 2N3904 comes under the category of NPN small signal, low power, general purpose transistor, mainly applicable for switching and for signal amplification. The function is HIGH VOLTAGE NPN SILICON TRANSISTORS.

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